Integrated Balanced FETs for Broadband Millimeter Wave Amplifiers.

Abstract

Using electron-beam exposure and MBE GaAs, balanced FETs were designed and fabricated. While the devices exhibited excellent dc characteristics, their single-sided rf performance was not up to expectations, for reasons yet to be determined. This report is an interim account of a program being continued under a different contract number (N00014-81-C-0270).

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1981
Accession Number
ADA107526

Entities

People

  • C. Hooper
  • C. Nishimoto
  • P. Stonestrom
  • S. Bandy
  • Y Chai

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • 5G Wireless Networks
  • Amplifiers
  • Broadband
  • Electron Beams
  • Electronics
  • Electronics Laboratories
  • Equations
  • Field Effect Transistors
  • Frequency
  • Low Noise
  • Materials
  • Metal-Semiconductor Junctions
  • Microwaves
  • Military Research
  • Millimeter Waves
  • Semiconductors
  • Transistors

Readers

  • Defense Acquisition Program Management
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • 5G - DoD 5G Program
  • Directed Energy
  • Microelectronics