High Resistivity Molecular Beam Epitaxial AlGaAs for Device Applications.

Abstract

High resistivity epitaxial layers of AlxGa1-xAs have been produced by molecular beam epitaxy. These layers have been incorporated, as a buffer layer, in the fabrication of GaAs MESFETs and the results are discussed. Device analysis includes an assortment of low frequency and DC measurements as well as RF measurements. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1981
Accession Number
ADA107597

Entities

People

  • D. L. Miller
  • D. R. Ch'en
  • W. A. Hill

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electronics
  • Electronics Laboratories
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Low Noise
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Power Electronics
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology