Influence of Contact Conditions and the Circuit on Short Negative Differential Mobility Semiconducting Devices.
Abstract
During the last two or three years we have seen a remarkable resurgence of interest in the physics of nonlinear semiconductor devices and transport. While there are probably as many reasons for this development as there are practitioners, we can group them into several categories. First there are the anticipated fruits of the VLSI and VHSIC programs. These programs are geared primarily to the development of conventionally conceived devices fabricated on a submicron scale, and provide the primary motivation for all other submicron programs. While the VLSI and VHSIC development will provide new, important military and commercial gains, its potential accomplishments are limited by our present understanding of semiconductor device physics. Most devices fabricated as part of this program use design tools generated by semiclassical transport, the best known being the mobility concept where the carriers respond instantaneously to changes in electric field. The inadequacy of the mobility concept for submicron length high speed devices was raised implicitly by Butcher and Hearn in 1968, and Rees in 1969; and explicitly by Ruch in 1972 in his well-known paper on velocity overshoot. Indeed, Ruch's paper was a watershed for device transport studies insofar as it focused attention on the transient dynamics of carrier transport and showed that the response of the carrier velocity to a sudden change in field was considerably different from that associated with mobility models.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 03, 1981
- Accession Number
- ADA108140
Entities
People
- H. L. Grubin
Organizations
- United Technologies Corporation