GaAs FET Device Modeling and Performance.

Abstract

This technical report contains a description of a quasi-two-dimensional model for GaAs FET operation. The model is based on modified expressions for the carrier continuity and Poisson equations in the conducting channel of an FET. The model is compared to full two-dimensional results to determine its accuracy. It is then used to study a variety of operating conditions. The effect of various material and device parameters are also discussed. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1981
Accession Number
ADA108745

Entities

People

  • George I. Haddad
  • J. R. East

Organizations

  • University of Michigan

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Avionics
  • Computers
  • Diffusion Coefficient
  • Electronics
  • Electronics Laboratories
  • Field Effect Transistors
  • Michigan
  • Physics
  • Physics Laboratories
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Stratified Fluids
  • Transistors
  • Two Dimensional
  • United States

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.