High-Energy Ion Implantation for Multigigabit-Rate GaAs Integrated Circuits.
Abstract
The objectives of the program are to: (1) investigate high-energy ion implantation of donors into GaAs for multigigabit-rate GaAs integrated-circuit (IC) development and (2) to study the use of high-power lasers and other techniques for removing lattice damage and activating implanted species. GaAs ICs require the selective definition of n-layers in semi-insulating (SI) GaAs for the fabrication of active devices such as FETs, TELDs, and Schottky-barrier diodes. In order to fabricate such device elements, a capability for realizing n-layers with doping ranging from 10 to the 16th power to 5 x 10 to the 18th power/cc and thicknesses from 1 to o.15 micrometer is required. Until the inception of this program, the major effort on ion implantation into GaAs has been at energies less than 500 keV, which limits the implant depth to typically less than several hundred nanometers. During this program, high-energy implantation of Si into SI GaAs at energies of 30 to 1200 keV has been investigated. Projected ranges and straggles have been measured by secondary ion-mass spectrometry (SIMS). Based on these measurements, we have produced up to approx. 1-micrometer-thick n-type GaAs layers at doping levels of approx. 5 x 10 to the 16th power to 1 x 10 to the 18th power/cc by multiple-energy Si implantation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1981
- Accession Number
- ADA108777
Entities
People
- C. P. Wu
- C. W. Magee
- E. C. Douglas
- S. G. Liu
- S. Y. Narayan
Organizations
- Sarnoff Corporation