Investigation of Technological Problems in GaAs
Abstract
A selection scheme for Cr-doped semi-insulating GaAs substrate for ion implanted FET structures has been developed. The surface resistivity of high quality semi-insulating substrates protected by a Si3N4 cap is found to change by less than an order of magnitude after heat treatment at 850 C for 30 minutes. The reproducibility of the carrier concentration profiles achieved by Se implanatation into those selected GaAs material (from 5 different boules) is approximately + or - 10% in peak doping level and maximum penetration. A capless annealing technique for the removal of crystal damages induced during ion implantation for FET structures has been successfully carried out. For high dose Se implants, nearly identical electron concentration can be achieved by the capless annealing techniques as can be obtained by annealing with an aluminum oxy-nitride protective cap for samples implanted with the same dose and annealed for the same time period and temperature. The complexity of the ion implantation procedure for GaAs device structure preparation is considerably simplified by the development of this novel capless annealing schemes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 28, 1976
- Accession Number
- ADA109298
Entities
People
- C. P. Wen