Development of Charge Transfer Devices for 1-2 Micron Imaging.

Abstract

Currently no satisfactory solid state imaging device exists for use in near infrared applications. While transmission photocathodes are most often used, their spectral response rapidly falls off for lambda > or = 0.99 micrometers due to the minimum vacuum level which can be achieved with a cesiated III-V semiconductor surface. These devices are thus suitable for use in those night vision systems which operate in the visible or near-infrared spectrum under low level moonlight and starlight illumination. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1981
Accession Number
ADA115867

Entities

People

  • Marshall J. Cohen
  • R. A. Milano
  • Robert J. Anderson
  • Y. Z. Liu

Tags

DTIC Thesaurus Topics

  • Charge Coupled Devices
  • Charge Transfer
  • Electro-Optics
  • Fabrication
  • Films
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Night Vision
  • Optical Properties
  • Plastic Explosives
  • Power Electronics
  • Schottky Diodes
  • Semiconductors
  • Surface Properties
  • X Rays

Fields of Study

  • Physics

Readers

  • Circadian Sleep-Wake Regulation and Chronobiology
  • Optical Physics and Photonics.
  • Plasma Physics.

Technology Areas

  • Microelectronics