Manufacturing Technology Program for High Burnout Silicon Schottky-Barrier Mixer Diodes for Navy Air-to-Air Avionics.

Abstract

This report describes the establishment of low cost semiconductor processes to manufacture low-barrier-height high-burnout X-band silicon Schottky barrier diodes in production quantities. These devices are thermal-compression-bonded in a rugged low-cost pill (ODS-119) package. They exhibit an overall low noise figure of 7.0 dB (single side band) at 0.5 mW of local oscillator power level and RF burnout of 12 watts (tau = 1 microsec and 1000 Hz rep. rate). Reliability and ruggedness of the design has been demonstrated by tests taken from MIL.S 19500 F. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 1982
Accession Number
ADA116260

Entities

People

  • Steven Ellis
  • Yoginder Anand

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Cathodes
  • Ceramic Materials
  • Engineering
  • Fabrication
  • Frequency
  • Impedance
  • Local Oscillators
  • Low Noise
  • Manufacturing
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor Junctions
  • Reliability
  • Schottky Diodes
  • Semiconductors
  • Test And Evaluation

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics