Studies of Growth-In Defects and Transport Properties Versus Growth Parameters in III-V Compound Semiconductors.

Abstract

The objectives of this research project are: (1) to investigate the grown-in deep level defects vs. growth parameters (e.g., growth temperature, growth rate, Ga/As ratio, and substrate orientations) in GaAs epilayers grown by liquid phase epitaxial (LPE) and vapor phase epitaxial (VPE) techniques, (2) to study the transport properties vs. growth parameters in the LPE and VPE grown GaAs, and (3) to study the effects of combined thermal and injection annealing on the grown-in defects in the VPE GaAs epilayers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 10, 1982
Accession Number
ADA117871

Entities

People

  • Shengsan Li

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Reactions
  • Electron Mobility
  • Energy Bands
  • Energy Levels
  • Epitaxial Growth
  • Gallium Arsenides
  • Liquid Phase Epitaxy
  • Liquid Phases
  • Low Temperature
  • P-N Junction Diodes
  • P-N Junctions
  • Point Defects
  • Schottky Diodes
  • Semiconductors
  • Space Charge
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Nanofabrication and Microfabrication.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics