HgCdTe Fabrication Using Directed Energy Techniques

Abstract

The goal of this research is to produce large-area, thin-film, single-crystal HgCdTe material for infrared detectors. This report describes initial results for the evaporation of CdTe onto insulating crystalline substrates (hot wall epitaxy), improvement of the surface morphology by pulsed electron-beam processing, and conversion to HgCdTe by evaporation and diffusion at constant temperature. Improvement in quality over past results and an increase in sample size to 2-inch diameter is expected with upgraded equipment described herein.

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Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1982
Accession Number
ADA118654

Entities

People

  • Anton C. Greenwald
  • Robert G. Wolfson

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Contractors
  • Crystal Growth
  • Crystals
  • Detectors
  • Directed Energy Weapons
  • Electron Beams
  • Electron Irradiation
  • Electrons
  • Epitaxial Growth
  • Fabrication
  • Films
  • Grain Size
  • Materials
  • Partial Pressure
  • Single Crystals
  • Temperature Gradients
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Software Engineering
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene