Study of the Electronic Surface States of III-V Compounds and Silicon
Abstract
Contents: The Ge-Ag Interface at Room Temperatures: An Energy Dependent Photoemission Study; The Si(III)/Pt Interface at Room Temperature: An Synchrotron Radiation Photoemission Study, Photoemission Investigation on the Oxidation of Si(III)-Ag Interfaces and Its Relation to the Interface Structure; Intermixing at the Early Stage of the Si(III)/Ag Interface Growth, Photoemission Studies of As and Its Room Temperature Oxidation; Photoemission Studies of Room- Temperature Oxidized Surfaces, Development and Confirmation of the Unified Model for Schottky Barrier Formation and MOS Interface States on III-V Compounds; Reply to ''Surface Photovoltage Measurements and Fermi Level Pinning: comments on Developoment and Confirmation of the Unified Model for Schottky Barrier Formation and MOS Interface States on III-V Compounds'' to be published in Thin Solid Films, The Use of Synchrotron Radiation to Study Oxygen and Metal Overlayers on GaAs (110) Surfaces; and Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 1982
- Accession Number
- ADA119737
Entities
People
- I. Lindau
- William E. Spicer
Organizations
- Stanford University