GaAs Surface Passivation for Device Applications.
Abstract
Two approaches were pursued in an effort to achieve a GaAs MIS technology. The first approach attempted to reproduce promising literature-reported C-V results on MBE-grown AlAs/Al1-xGaxAs/GaAs heterojunction structures. The insulator was formed on these structures by thermal oxidation of the outer AlAs/Al1-xGaxAs layers. Although several samples involving both n- and p-type structures were prepared, the C-V results showed only deep depletion characteristics with substantial hysteresis and the insulators formed by thermal oxidation were relatively poor. The second approach studied to obtain a GaAs MIS structure involved the use of deposited insulators. These results and other considerations suggested that oxygen-free insulators may be needed for GaAs MIS applications. A UHV system was developed for the deposition of AlN. Although the C-V characteristics of the MIS structures fabricated by using the deposited AlN showed subatantial hysteresis, these preliminary results when compared to calculations for an ideal MIS structure suggest that both accumulation and inversion were obtained. The rationale which indicates that the AlN/GaAs interface could be attractive for GaAS MIS applications is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1982
- Accession Number
- ADA120179
Entities
People
- D. L. Miller
- J. R. Waldrop
- K. R. Elliott
- R. W. Grant
- S. P. Kowalczyk