Wideband Monolithic Microwave Amplifier Study.

Abstract

The detailed study of factors limiting the performance of microwave monolithic distributed amplifiers utilizing GaAs(Gallium Arsenide) FETS(Field Effect Transistors) is continued. New expressions for gain, attenuation constant, phase constant and optimum numbers of devices are given. A sensitivity analysis is carried out and a computer program to analyze amplifier performance and aid in design is presented. The report concludes with a practical design for an 8-device amplifier from 2 to 20 GHz having a gain of 4.75 dB at 20 GHz. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1982
Accession Number
ADA120904

Entities

People

  • G. K. Hoherwarter
  • J. B. Beyer
  • J. E. Nordman
  • R. C. Becker
  • S. N. Prasad

Organizations

  • University of Wisconsin–Madison

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Circuit Analysis
  • Computer Programs
  • Computer Simulations
  • Computer-Aided Design
  • Distributed Amplifiers
  • Electronics
  • Engineering
  • Fabrication
  • Field Effect Transistors
  • Figure Of Merit
  • Frequency Response
  • Impedance
  • Microwave Amplifiers
  • Standards
  • Topology
  • Transistors

Fields of Study

  • Physics

Readers

  • Electronics Engineering

Technology Areas

  • Microelectronics