S-I-S mm-Wave Mixers and Detectors.
Abstract
This program is part of an ongoing effort to fabricate all-refractory S-I-S devices for use as mm-wave detectors and mixers in the quantum regime, and operating in the temperature range of 8-10 K. There are four ongoing approaches to achieve this goal: (1) Development of high-quality NbN-barrier-Nb S-I-S junctions as an intermediate goal towards fabricating all-NbN junctions; (2) Actual development of all-NbN junctions using the results of (1) above as a guide; (3) Development of an in-house NbN deposition capability in order to speed the progress on (2) above; and (4) The use of existing all-NB digital circuit fabrication capability to design and fabricate mm-wave mixers to operate at T less than or approx. 4.2 K, thus gaining valuable experience that can be applied to the eventual design of all-NbN mixers. Sputtered NbN-a:Si-NB Josephson tunnel junctions fabricated using SRC's SNAP process (Selective Niobium Anodization Process) have been developed. All-NbN devices using the plain a:Si barrier have been developed to the point where they exhibit S-I-S tunnelling characteristics. Fourteen types of mm-wave mixer chips have been designed in collaboration with the Goddard Institute for Space Studies using the existing all -NB digital circuit fabrication process. Masks were fabricated, and a trial fabrication proved the integrity of the process. The viability of the proposed mounting scheme has been experimentally ascertained.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1982
- Accession Number
- ADA122071
Entities
People
- D. W. Jillie
- H. Kroger
- L. N. Smith
Organizations
- Sperry Corporation