The Development of Refractory Metallization for High-Speed VLSI Circuits.

Abstract

The use of refractory materials (metals, silicides and composites) in VLSI circuits is reviewed. Material consideration, including deposition techniques, film structure, electrical and mechanical properties, are covered. Gate structures implemented with a variety of refractory materials are described. Semiconductor device processes incorporating these materials--plasma etching, ion implantation, oxidation--are discussed from the perspective of VLSI compatibility. Characteristics of MOS devices and circuits using refractory technology are reviewed. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 22, 1983
Accession Number
ADA125783

Entities

People

  • A. J. Steckl
  • T. P. Chow

Organizations

  • Rensselaer Polytechnic Institute

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Circuits
  • Composite Materials
  • Crystal Structure
  • Electrical Properties
  • Electrons
  • Ion Implantation
  • Mass Spectrometry
  • Materials
  • Materials Processing
  • Mechanical Properties
  • Metal Oxides
  • Refractory Materials
  • Semiconductor Devices
  • Semiconductors
  • Transition Temperature
  • X Rays

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Surface Engineering/Surface Coating Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene