Computer-Aided Design of Integrated Circuit Fabrication Processes for VLSI (Very Large Scale Intergration) Devices (Computer-Aided Engineering of Semiconductor Integrated Circuits)
Abstract
Efficient design of high performance VLSI process requires accurate models for the physical processes used for fabrication. This is particularly true as device geometries shrink and fabrication technologies become inherently 2D. First order models for thermal oxidation, ion implantation, diffusion, chemical vapor deposition and other processes cannot accurately predict device structures from modern IC technologies. The fundamental objective of this program is to develop accurate and physically correct models for these processes which are general enough to incorporate in a general purpose, user-oriented computer simulation tool - SUPREM. This program accepts process schedules as inputs and provides predicted device structures as outputs. It is meant to be capable of accurately simulating both bipolar and MOS VLSI structures. SUPREM is specifically designed to couple with device simulation tools so that it forms the cornerstone of a hierarchy of VLSI process, device, circuit and system design aids.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1983
- Accession Number
- ADA130105
Entities
People
- Akintunde I. Akinwande
- B. Cairns
- G. Bronner
- L. Christel
- W. Dibble Jr.
Organizations
- Stanford University