Fabrication of a Silicon MOSFET Device with Bipolar Transistor Source,

Abstract

A series of MOS devices evolving the direct integration of a Si MOSFET and a bipolar transistor into a single four terminal device is described. The final device, termed an MOSBJT is shown to exhibit gain and novel electronic characteristics. (Author)

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1980
Accession Number
ADA132332

Entities

People

  • David N. Okada

Organizations

  • University of Hawaiʻi at Mānoa

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Contracts
  • Diffusion
  • Diffusion Coefficient
  • Electrical Engineering
  • Electronics
  • Electronics Laboratories
  • Engineering
  • Experimental Data
  • High Temperature
  • Measurement
  • Military Research
  • Modules (Electronics)
  • Oxidation
  • Semiconductors
  • Transistors
  • Universities

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics