A Rectangular Gate Merged MOSBJT.

Abstract

The design, fabrication and device characteristics of a rectangular gate MOSBJT are described. The characteristics are explained in terms of the merged character of the device and the self biasing effects of the distributed collector current on the collector channel/base bias. For sufficiently high collector currents a portion of the collector channel is self-biased resulting in a decreased beta. The active area of the device is then controlled by the device operating bias.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1981
Accession Number
ADA132333

Entities

People

  • David Okada
  • James W. Holm-kennedy

Organizations

  • University of Hawaiʻi at Mānoa

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Electrical Engineering
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Inversion
  • Metal Oxide Semiconductors
  • Oxides
  • Power Electronics
  • Semiconductors
  • Substrates
  • Transistors
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  • Computer Programming and Software Development.
  • Electronics Engineering