Computer Modeling of Complete IC Fabrication Process.

Abstract

Process and device modeling, especially in two-dimensions, for the complete integrated circuit fabrication process is reported. New understanding of oxidation and diffusion effects in silicon are reported and new computer tools and techniques are discussed. Device simulation is coupled to process modeling and new results for both short- and narrow-channel devices are reported. Non-planar device simulators, both poisson and two-carrier capabilities, have been developed. New techniques have been developed for parameter extraction and measurements. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA138006

Entities

People

  • R. W. Dutton

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Ceramic Materials
  • Computer Programs
  • Computer-Aided Design
  • Electrical Properties
  • Electronics Industry
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Integrated Circuits
  • Materials
  • Materials Science
  • Modules (Electronics)
  • Semiconductor Devices
  • Semiconductor Manufacturing
  • Semiconductors
  • Very Large Scale Integration

Readers

  • Computer Science.
  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Semiconductor Device Technology