Micro-Reactions of Metal Contacts on Various Types of GaAs Surfaces.

Abstract

An XPS and ISS analysis of a range of GaAs surfaces is reported which are produced by various technological steps such as etching in basic or acidic solutions as costumary before the deposition of metals. Studies on the light emission for reverse biassed Schottky contacts has resulted in a better understanding of the influence of preevaporation etchants on this emission. First results of lateral material transport between co-planar electrodes and on Metal-GaAs interdiffusion due to typical operational device conditions are presented. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1984
Accession Number
ADA139412

Entities

People

  • E. Huber
  • H. L. Hartnagel
  • J. Wuerfl
  • K. H. Kretschmer
  • K. Roehkel

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boundaries
  • Charge Carriers
  • Chemical Shifts
  • Chemistry
  • Compound Semiconductors
  • Electric Fields
  • Electronics Laboratories
  • Energy Transfer
  • Failure Mode And Effect Analysis
  • Field Effect Transistors
  • Materials Science
  • Metal-Semiconductor Junctions
  • Power Electronics
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Surface Properties

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.