Impurity and Defect Interactions in GaAs.

Abstract

This work was initiated to examine interactions among impurities and defects in GaAs which produce problems in the fabrication of high-speed integrated circuits. For this purpose various aspects of impurity and defect identification, interaction, redistribution, incorporation, and carrier scattering were investigated. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Feb 29, 1984
Accession Number
ADA139592

Entities

People

  • C. M. L. Yee
  • C. M. Wolfe
  • G. E. Stillman
  • J. H. Burgess
  • P. A. Fedders

Organizations

  • University of Washington

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Boltzmann Equation
  • Chemical Vapor Deposition
  • Chemistry
  • Computational Science
  • Crystal Structure
  • Crystals
  • Electrical Properties
  • Electromagnetic Fields
  • Electronics Laboratories
  • Epitaxial Growth
  • Field Effect Transistors
  • Mass Spectroscopy
  • Materials
  • Modules (Electronics)
  • Scattering
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design