Theoretical Studies of High Field, High Energy Transport in Gallium Arsenide, Silicon and Heterostructures,

Abstract

The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. A Monte Carlo simulation, including a pseudopotential band structure, is chosen for this study. It is shown in this study that this method can be applied to both the steady state and the transient state transport problems. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1983
Accession Number
ADA142408

Entities

People

  • J. Y. F. Tang

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Boltzmann Equation
  • Computational Science
  • Computer Simulations
  • Crystal Lattice Vibrations
  • Electron Emission
  • Energy Bands
  • Field Effect Transistors
  • Materials
  • Monte Carlo Method
  • Phonons
  • Quantum Mechanics
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics
  • Transport Properties
  • Very Large Scale Integration

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Space