Lossless Symmetric TEM Line IMPATT Diode Power Combiners.
Abstract
The results of an experimental investigation into a new approach to circuit-level power combining of negative-resistance devices are presented. The approach uses the properties of symmetric lossless TEM line combining networks together with the bandlimited characteristics of IMPATT diodes to achieve stable combiner designs having improved bandwidths over other approaches. The combining networks utilized in this investigation fall into the category of N-way nonresonant combiners which are often associated with various bandlimiting resistive stabilization techniques for suppressing non-power-producing interactions among the devices. This combining design requires no such stabilizing scheme. Suppression of undesired odd modes is accomplished in lossless circuits by an appropriate combinations of device and circuit which provides the necessary condition for a stable combiner.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 1984
- Accession Number
- ADA142599
Entities
People
- R. Actis
Organizations
- University of Michigan