High Temperature Electronics Technology

Abstract

This report summarizes the barrier metallization developments accomplished in a program intended to develop 300 C electronic controls capability for potential on-engine aircraft engine application. In addition, this report documents preliminary life test results at 300 C and above and discusses improved design practices required for high temperature integrated injection logic semiconductors. Previous Phase I activities focused on determining the viability of operating silicon semiconductor devices over the - 55 C to +300 C temperature range. This feasibility was substantiated but the need for additional design work and process development was indicated. Phase II emphasized the development of a high temperature metallization system as the primary development need for high temperature silicon semiconductor applications.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1984
Accession Number
ADA143571

Entities

People

  • D. E. Hurtle
  • J. C. Dening

Organizations

  • General Electric

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aircrafts
  • Chemistry
  • Crystal Growth
  • Crystal Structure
  • Electronics Laboratories
  • Fabrication
  • Failure Mode And Effect Analysis
  • Integrated Circuits
  • Logic Gates
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation
  • Transistors
  • Turbines

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics