Characterization of Infrared Optical Properties of Transparent Materials.

Abstract

The techniques of deep level derivative absorption spectroscopy (DLDAS), photoinduced-transients-spectroscopy (P.I.T.S.) were employed to study deep levels and interfaces in Ga As. Optical transitions due to impurities and structural imperfections where observed by (DLDAS) which can be correlated with levels observed by (P.I.I.S.). Raman measurements were used to study changes in the surface depletion layer width of Ga As as a result of oxidizing and reducing plasma treatments; in addition, the local strain in Ga As due to various thicknesses of silicon nitride were studied by observing the shift of the LO phonon frequency. (Author)

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Document Details

Document Type
Technical Report
Publication Date
May 15, 1984
Accession Number
ADA143988

Entities

People

  • R. Braunstein

Organizations

  • University of California, Los Angeles

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Air Force
  • Backscattering
  • Charge Carriers
  • Electrical Properties
  • Epitaxial Growth
  • Field Effect Transistors
  • Materials
  • Measurement
  • Optical Properties
  • Radiation
  • Raman Scattering
  • Scattering
  • Semiconductors
  • Spectra
  • Spectroscopy
  • Transitions

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.