Laser Annealing of GaAs

Abstract

Laser annealing of implanted semi-insulating GaAs has been accomplished by a ruby laser pulse. Measurements of the electron concentration profiles in the Se+ implanted and annealed GaAs samples indicate values in excess of 10 to the 19 power per cc, which are at least a factor of two higher than observed for correspondingly implanted samples which were thermally annealed.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1978
Accession Number
ADA145857

Entities

People

  • F. H. Eisen

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Annealing
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Implantation
  • Ion Implantation
  • Ions
  • Laser Beams
  • Laser Pulses
  • Lasers
  • Materials
  • Mobility
  • Ruby Lasers
  • Semiconductor Devices
  • Semiconductors
  • United States

Readers

  • Materials Science and Engineering.
  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics