Novel Transport and Recombination Processes in Semiconductors.
Abstract
This report describes our work on spin dependent recombination to date and contains copies of preprints and reprints of our work on two dimensional transport. Our work on spin effects has succeeded in identifying both spin dependent generation and recombination. The obtained structure is described and it is shown that damage produced by avalanche injection of holes gives rise to an SDR signal. The major feature of our work on the electronic properties of two dimensional systems is the frequency production of fractional quantisation in Si inverstion layers and GaAs-AlGaAs heterojunctions. Decreasing the transport length scale reduces the role of disorder and enhances the electron-electron interaction. This work leads to the possibility of observation of a number of effects based on a trade off between localisation and interactions. Other 2D topics discussed are the effects of the electron-electron interaction on transport in high magnetic fields and the role of disorder in altering the rate of electron-electron scattering. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1984
- Accession Number
- ADA145969
Entities
People
- M. Pepper
Organizations
- University of Cambridge