High-Speed Modulation of GaInAsP Lasers.
Abstract
Q-switched diode lasers and external modulators have been developed for modulation of diode lasers at multigigahertz rates, beyond the capability of conventional current modulation techniques. Three types of Q-switched lasers were made including an H(+)-isolated buried-heterostructure (BH) version with a threshold of 40 mA and a B3-implanted BH version with a threshold of 15 mA. The lasers have a drive capacitance of well under a picofarad. The BH lasers operate continuously at room temperature. Rates as high as 7 GHz have been achieved. Simulations show the device should work at data rates of 10 Gbit/sec and higher with a binary pulse position modulation format. Several types of single-mode InP and GaInAsP waveguides, three-guide couplers and phase modulators were fabricated as initial steps in the development of multigigahertz analog modulators which could be monolithically integrated with diode lasers. Device characteristics include single-mode guide propagation loss of 1.5 per cm. at 1.15 micron, 6-mm coupling length and a 20-V pi-radian phase shift. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1982
- Accession Number
- ADA146551
Entities
People
- F. J. Leonberger
Organizations
- Massachusetts Institute of Technology