Formation of a Limiting Composition in the Preparation of Ternary III-V Semiconductors by the VPE (Vapor Phase Epitaxy) Hydride Technique,
Abstract
A study was undertaken to improve the quality of epitaxial layers of GaxIn1-xAs semiconductors by adding a continuous hydrogen chloride (HC1) etch to the mixing zone of the reactor in the vapor phase epitaxy (VPE)-hydride technique. An unusual observation was noted when the partial pressure of HC1 in the mixing zone was equal to or greater than .007 atm in the present study. At these partial pressures of HC1, only one ternary is formed and has a composition corresponding to Ga0.87zin0.13As. This phenomenon is explained with a mechanism based on the Langmuir's adsorption isotherm, where saturated HC1 absorption occurs. The study shows that the net growth rates of layer formation changes from positive to negative values with increasing pressures of HC1 in the mixing zone.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1984
- Accession Number
- ADA147639
Entities
People
- K. P. Quinlan
- T. E. Erstfeld
Organizations
- Rome Laboratory