3-D LOGIC, Three-Dimensional CMOS Localized Overgrowth Integrated Circuits.
Abstract
The selective epitaxial growth of silicon films of IC fabrication with a special emphasis for three-dimensional CMOS integrated circuits is discussed in this paper. Localized crystalline thin films of silicon have been grown selectively from window strips, which have been cut in the silicon dioxide. This was done in a RF heated low-pressure epitaxial reactor. The silicon substrated are (100) and the reactant gases are SiH2Cl2, HCl and H2. These thin silicon and orientations of the silicon dioxide window strips. Specifically, the morphology and the growth rate are studied in detail, as a function of the relative ratio of HCl to SiH2Cl2 from 0 to 6 with the silicon dioxide window strips oriented in (110) and (100) directions. At the lower ratios, nucleation of the silicon dioxides results in polycrystalline films. At the higher ratios, etching into bulk silicon, which is defined by the window strips, results in no deposition. The desires results, selective epitaxial growth, are obtained in between. The facets mentioned have been identified to be (100), (101) and (311) by scanning electron and optical micrographs. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 15, 1985
- Accession Number
- ADA152165
Entities
People
- B. Hoefflinger
- S. T. Liu
Organizations
- Honeywell International, Inc.