Completely Consumed Carbide - A New Process for Dielectric Isolation.

Abstract

A new process for dielectric isolation based on the use of silicon carbide has been investigated. This process uses the lower oxidation rate of SiC compared to Si to provide local regions of thick field oxide. If the local oxidation process results in the complete consumption of the carbide (C3) film, then a high quality MOS structure is obtained. In this paper, this C3 process is compared to the standard silicon nitride LOCOS process. MOS capacitors and Schottky barrier diodes have been fabricated with both techniques for varying pad oxide thickness (0, 100, 200 A). The effect of high temperature anneal on these structures has been investigated. The electrical properties of these devices have been measured. This includes lifetime, breakdown voltage and I-V characteristics. For the minimum bird's besk case (no pad oxide) the C3 process results in superior electrical properties over the standard nitride process. Originator-supplied keywords include: Silicon carbide, Dielectric isolation, MOS structures.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1985
Accession Number
ADA152379

Entities

People

  • A. J. Steckl
  • T. P. Chow
  • W. J. Lu

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Diodes
  • Electrical Properties
  • Electronics
  • High Temperature
  • Metal-Semiconductor Junctions
  • Schottky Diodes
  • Semiconductor Devices
  • Semiconductors
  • Silicon
  • Silicon Carbide
  • Standards
  • Thickness
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Fully Networked C3
  • Fully Networked C3 - Command and Control