Micro-Reactions of Metal Contacts on Various Types of GaAs Surfaces.

Abstract

Further XPS analysis results of a range of GaAs surfaces are reported which are produced by various technological steps such as etching in basic or acidic solutions as customary before the deposition of metals. The findings of lateral material transport between co-planar electrodes, on Metal-GaAs interdiffusion due to typical operational device conditions and on the electron wind in narrow conductors are presented. Originator supplied keywords include: GaAs, Metallization stability, XPS, ISS, GaAs surface chemistry.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1985
Accession Number
ADA153650

Entities

People

  • B. R. Sethi
  • H. L. Hartnagel
  • J. Wuerfl
  • K. H. Kretschmer

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemistry
  • Compound Semiconductors
  • Electric Fields
  • Energy
  • Films
  • Measurement
  • Metal Contacts
  • Metal Films
  • Metal-Semiconductor Junctions
  • Organic Solvents
  • Semiconductors
  • Spectra
  • Surface Chemistry
  • Surface Finishing
  • Surface Properties
  • Surface Roughness

Fields of Study

  • Materials science

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene