Noise Characteristics of an Avalanche Photodiode.
Abstract
The responsivity, noise equivalent power, specific detectivity, shot noise and multiplication noise of a RCA C30872 silicon reach-through avalanche photodiode were studied at 4 wavelengths 563.8 nm, 569.9 nm, 699.6 nm, and 826.2 nm. The detector noise was resolved into amplifier, shot and a multiplied leakage components as a function of the reverse bias voltage. Experimental results are discussed and it is concluded that this photodiode has an optimum reverse bias voltage of about 250 volts that maximizes the specific detectivity and minimizes the noise equivalent power. The avalanche photodiode excess noise factor was found to be 1.4-2.0 at low gain and increase to 9.17 at a gain of 44.0.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1984
- Accession Number
- ADA154096
Entities
People
- E. G. Kim
Organizations
- Naval Postgraduate School