Electron Irradiation of n Type Cadmium Telluride.
Abstract
An experiment is described in which 30 MeV electrons were used to irradiate a sample of cadmium telluride. A brief history of irradiation studies of cadmium telluride is given, followed by the description of the construction of a laboratory used in the taking of Hall measurements and resistivity versus temperature data. The irradiation was performed at the Naval Postgraduate School linear accelerator facility and damage was observed in the CdTe sample at doses above 10 to the 13th power electrons/sq cm. The sample was held at 100 K for the irradiation. Three results were noted from the Hall and resistivity data. First, the resistivity increased by a factor of two at radiation doses of 10 to the 15th power electrons/sq cm. Secondly there was a ten percent lowering of the electron mobility at 77 K. Finally, possible annealing was seen at 160 K for the 10 to the 13th power electrons/sq cm dose resistivity versus temperature graph. Photoluminescence measurements confirmed the existence of damage by an increase of a broad maximum associated with defects. Additional keywords: radiation effects; bulk semiconductors; photoconductivity; infrared semiconductor detectors; computer programs. (Author).
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1985
- Accession Number
- ADA156117
Entities
People
- C. P. Bauer Jr
Organizations
- Naval Postgraduate School