Clustering and Ordering in III-V Alloys.
Abstract
Staggered lineup heterojunctions are expected to exhibit tunneling assisted optical transitions across the interfacial energy gap E sub I. In the staggered lineup, E sub I is smaller than either of the energy gaps of the constituent semiconductors. In this work, we examined two staggered lineup heterojunctions, ZnSnP2/GaAs and In1-xGaP/GaAs. Below bandgap emission and absorption were observed in these structures, allowing the experimental determination of E sub I. Good agreement was seen between this value of E sub i and that from the predicted band lineup. Advances in technology have made possible the fabrication of rapidly varying heterostructuares which hold the promise of important applications. We develop a set of approximate treatments of electron states in a variety of layered heterostructures. Recent III-V alloy formation models indicate that negative charge transfer energy can overcome positive bond distortion energy to stabilize long-range order or compound formation. Although a report of a layered ordering in A1xGa1-xAs tends to confirm this result, we have as yet obtained no convincing evidence for such ordering in InxGa1-xP.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 31, 1985
- Accession Number
- ADA161099
Entities
People
- C. M. Wolfe
- Elizabeth A. Patten
- M. W. Muller
- P. Roblin
- ShengâJen Hsieh
Organizations
- University of Washington