New Ultra Low Permittivity Composites for Use in Ceramic Packaging of Ga:As Integrated Circuits.
Abstract
This report documents work performed to develop materials systems for use in the ceramic packaging of Ga:As integrated circuits. Topics under study at Penn State are: dielectrics produced from Macro-Defect-Free (MDF) cements. Both aluminate and silicate based cements have been studied. The objectives of the first year's work have been to show that suitable test tablets can be produced which exhibit dielectric losses less than 1% into the frequency range of 2.5 GHz. Current work is focused upon lowering the permittivity level using silica microballoons dispersed in the matrix. Sol-gel preparation of both thick (25 microns) and thin (0.5 microns) SiO2 and silica:alumina films has shown that in the diphasis system, it is possible to produce crack-free monoliths with permittivities in the range 1.6 to 2.0 and loss tangents below .003. In the thin films, capping of columnar sputtered etched films has been demonstrated. For etched Schott and Vycor glass structures, permittivities in the range 2.5 to 3.0 have been measured with excellent low loss properties. Sputtered silicon films have been sucessfully etched to yield highly planar columnar structures up to 25 microns meters thick. Experiments are in progress to convert the silicon to SiO2 by an oxidation step and capping of the columnar structure using sol-gel coatings has been achieved. In a parallel program at Interamics, new families of borosilicate glass bonded alumina ceramics are being developed. Tapes using both lead and calcium boroslicate glasses have been fabricated and densified at firing temperature below 1,000 C. Current studies are exploring suitable metallization techniques.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 18, 1985
- Accession Number
- ADA168877
Entities
People
- Leslie Eric Cross
Organizations
- Pennsylvania State University