Electronic Structure of Langmuir-Blodgett Films on GaAs and Other Materials.
Abstract
The intent of this preliminary programme was to deposit langmuir-Blodgett (LB) films on semiconductor surfaces, and assess their structure, thickness and perfection using a variety of experimental techniques. In doing this we have contributed to rehousing Professor Pethrick's L-B trough in a 'clean room' in the Chemistry Laboratory. This followed advice from Dr. M. Petty at Durham University, largely because we have experienced difficulties in obtaining reproducible results with many samples. To date our work has been concerned with GaAs, GaP and Si, all in the form of (111) wafers, which had been mechanically polished to an 0.25 micrometer finish using diamond paste, prior to chemical polishing and refluxing for several hours in isopropyl alcohol vapour. Such samples were assumed to be clean, and were kept in an evacuated chamber until ready to be treated in the L B trough.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 30, 1986
- Accession Number
- ADA172264
Entities
People
- B. Henderson
Organizations
- University of Strathclyde