Fundamental Studies and Device Development in Beta Silicon Carbide.

Abstract

The research of this reporting period has involved the growth of large area thin films of beta-SiC and an investigation regarding the improvement of thickness uniformity of the films in a given run. Additional research, described in preprints derived from recent presentations and included in this document, include ion implantation, amorphization, rapid thermal annealing, electrical properties, oxidation, reactive ion etching and device fabrication. Finally, the highlights of and program and abstracts from the 1985 SiC Conference are included in this document. Keywords: Chemical vapor deposition; Electronic materials; In situ doping; Electron microscopy; Secondary ion mass spectroscopy; Rutherford backscattering; Oxidation; P-n junction.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1985
Accession Number
ADA173511

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Electrical Properties
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Mass Spectrometry
  • Materials
  • Materials Engineering
  • Materials Science
  • Modules (Electronics)
  • P-N Junctions
  • Power Electronics
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene