Effects of 30 Mev Electron Irradiation on InGaAsP LEDs (Light Emitting Diodes) and InGaAs Photodiodes.

Abstract

InGaAsP LEDs and InGaAs photodiodes were irradiated with a 30 MEV electron beam. The rate of performance degradation were studied. Simple models for LED and photodiode current controlling mechanisms and for a phenomenological radiation damage constant are presented. The dominant current controlling mechanisms and the peak wavelength of the LEDs and photodiodes did not change during irradiation.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1986
Accession Number
ADA173617

Entities

People

  • Patrick J. O'reilly

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Charge Carriers
  • Electromagnetic Fields
  • Electronic Components
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Fermi Levels
  • Ionizing Radiation
  • Light Emitting Diodes
  • Measurement
  • Modules (Electronics)
  • Optical Detectors
  • Optoelectronic Devices
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors
  • Solid State Physics

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics