Analysis of Impurity Band Formation and Related Effects Near the P/N Junction in Compensated GaAs and Si.

Abstract

This report contains the results of applying the bandgap narrowing model to studying the dopant concentration changes near the P/N junction of semiconductor parameters that have a direct effect on current voltage characteristics. The report describes the method of compute modeling and analysis and the important conclusions reached. Of significance is the explanation of compensated semiconductor material behavior vs temperature and its implication for solar cells and microwave detectors.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1986
Accession Number
ADA173727

Entities

People

  • L. C. Brown

Organizations

  • University of Dayton

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Computer Programs
  • Crystal Lattices
  • Crystal Structure
  • Detectors
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Fermi Levels
  • Materials
  • Microwave Detectors
  • Probability Distributions
  • Semiconductor Devices
  • Semiconductors
  • Solar Cells
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics