Si on Alumina Phase Shifters.

Abstract

P-i-n diode phase shifters for operation below 10 GHz require a relatively small diode area in relation to the overall microstrip circuitry. Recrystallization of silicon islands deposited on alumina substrates is being explored as a means of providing the necessary diode material. Initial crystallization experiments with an electron beam have identified refinements needed to the system. A diode design study favors a lateral over a vertical p-i-n structure and suitable masks are in preparation. A method of evaluating minority carrier lifetime in thin silicon films on insulators has also been developed and will be used to evaluate recrystallized films. Keywords include: diode phase shifters, silicon on alumina, melt recrystallization.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1986
Accession Number
ADA174721

Entities

People

  • Edward W. Maby
  • Ronald J. Gutmann

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Capacitance
  • Ceramic Materials
  • Crystals
  • Electron Beams
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Geometry
  • Lasers
  • Light Sources
  • Materials
  • Monolithic Microwave Integrated Circuits
  • P-N Junctions
  • Power Electronics
  • Semiconductors
  • Silica Glass
  • Two Dimensional

Readers

  • Phased Array Antenna Design.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene