Defect Reduction in Epitaxial Growth using Superlattice Buffer Layers.
Abstract
Several superlattice structures, grown by molecular beam epitaxy, have been used to reduce the density of threading dislocations originating from the Gallium Arsenide substrates. Initial results indicate that GaAsP-InGaAs strained layer superlattice buffer layers are effective in reducing dislocation in GaAs grown on silicon substrates. The stability of SLS in electronic devices either as part of the active layers or buffer layers is being addressed. We are currently conducting pioneering work in new ways to deposit superlattices and atomic layer epitaxy without any gas switching.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1986
- Accession Number
- ADA177529
Entities
People
- S. M. Bedair
Organizations
- North Carolina State University