Noise Characteristics of MOS (Metal-Oxide Semiconductors) Devices Degraded by Electrical Overstressings.

Abstract

The endochronic degradation of MOS devices arising from the global response of the device parameters collectively deteriorating under the repetitive influence of electrical overstresses (at subcatastrophic levels) such as electrostatic discharge (ESD), electromagnetic pulsing (EMP), etc., is quantified in terms of noise characteristics. Life-time studies depicting the degradation of a test device are presented. Computer and experimental data are furnished. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1987
Accession Number
ADA178217

Entities

People

  • Ibrahim R. Turkman
  • Perambur S. Neelakantaswamy

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Demographic Cohorts
  • Electric Fields
  • Electrical Engineering
  • Electronics
  • Electrons
  • Engineering
  • Experimental Data
  • Human Body
  • Low Voltage
  • Metal Oxide Semiconductors
  • Military Research
  • Mobility
  • Normal Distribution
  • Semiconductors
  • Solid State Electronics
  • Standards
  • Statistical Analysis

Readers

  • Acoustics.
  • Electrical Engineering
  • Structural Health Monitoring of Composite Structures.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene