A GaAs MESFET Mixer with Very Low Intermodulation,

Abstract

The report describes the design and performance of a new type of resistive mixer, which uses the channel resistance of a GaAs MESFET to achieve frequency mixing. Because this resistance is highly linear, very low intermodulation results. The mixer can be analyzed via existing mixer theory, with good agreement with measured performance. At 10 dBm LO power, the X-band mixer achieves 6.5-dB conversion loss, 6.6-db noise figure, 21.5-dBm output third-order intermodulation intercept point, and 9.1-dB 1-dB compression point. Keywords include: Dynamic range, FET mixers, GaAs FET mixers, Intermodulation distortion, Mixers, and Receivers.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1986
Accession Number
ADA179993

Entities

People

  • Stephen A. Maas

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Artificial Intelligence
  • Chemical Kinetics
  • Chemistry
  • Conversion
  • Electronics Laboratories
  • Field Effect Transistors
  • Frequency
  • Materials
  • Materials Science
  • Physics Laboratories
  • Resistance
  • Schottky Diodes
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Space Systems
  • X Band

Readers

  • Microwave Engineering.
  • Semiconductor Device Technology