Narrowband 10 GHz and 20 GHz GaAs FET Amplifiers in Coplanar Waveguide.

Abstract

Single-stage, narrowband 10 GHz and 20 GHz GaAs FET amplifiers using Coplanar Waveguide (CPW) distributed matching elements were built and tested. The amplifiers were constructed to closely model monolithic amplifiers on GaAs by mounting GaAs FET chips into an epsilon (r) = 13 substrate material, onto which the CPW matching elements were placed. A CPW test fixture was designed and a routine for de-embedding the s-parameters of FET chips mounted in CPW was developed and successfully used. The 10-GHz amplifiers had an average of 9 dB gain. Due to a de-embedding error none of the 20-GHz amplifiers provided positive gain at 20 GHz. A second de-embedding effort yielded s-parameters that were used to accurately predict the actual performance of the 20-GHz amplifier designs.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1986
Accession Number
ADA182751

Entities

People

  • Peter J. Rainville

Organizations

  • Rome Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acquisition
  • Coaxial Cables
  • Computer Programming
  • Computer Programs
  • Computers
  • Data Acquisition
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Impedance
  • Materials
  • Microwave Amplifiers
  • Strip Transmission Lines
  • Surface Roughness
  • Test Fixtures
  • Transistor Amplifiers
  • Transmission Lines

Readers

  • Electronics Engineering
  • Microwave Engineering.
  • Semiconductor Device Technology