MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices.

Abstract

Results obtained for MBE grown N & P-type layers in terms of carrier concentration and electron or hole mobilities. Most layers grown after the start date of the current contract. It is important to point out that even if these results are the best ever obtained in the laboratory they are representative of our level of control concerning the growth. Numerous layers with the same composition exhibit very similar results. A new Hg cell, which is a prototype built by ISA - Riber is currently being tested in the laboratory. This cell that we have conceived gives a very stable Hg flux during hours of growth. It should be noted that both mobility and carrier concentration values are suitable for IR device application. Keywords: Mercury compounds, Cadmium Tellurides.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1987
Accession Number
ADA187456

Entities

People

  • Jean-pierre Faurie

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Reactions
  • Compound Semiconductors
  • Conduction Bands
  • Contracts
  • Crystal Structure
  • Dielectrics
  • Electron Mobility
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • Materials
  • Measurement
  • Mobility
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics