Deposition of Device Quality Epitaxial Layers of Gallium Nitride and Indium Nitride for Electronic Applications.

Abstract

The major activity scheduled for the first year of the program was the design and construction of a suitable ultra-high vacuum deposition apparatus and the initiation of shakedown experiments. The apparatus has essentially been completed and shakedown experiments are beginning. The apparatus design and the experimental plan for the shakedown experiments are described in this report.

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Document Details

Document Type
Technical Report
Publication Date
Oct 09, 1987
Accession Number
ADA188001

Entities

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Aluminum Oxides
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemistry
  • Compound Semiconductors
  • Deposition (Materials Processing)
  • Electron Spectroscopy
  • Epitaxial Growth
  • High Temperature
  • High Vacuum
  • Ion Beams
  • Ion Sources
  • Ions
  • Mass Spectrometers
  • Nitrogen
  • Photographs
  • Spectroscopy

Readers

  • Materials Science and Engineering.
  • Software Engineering
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems