Strength and Structure of Ga sub 1-x In sub x As Alloys
Abstract
Solid solution strengthening of GaAs by In atoms acting as InAs 4 units has been predicted for an intermediate temperature, plateau region. This strengthening could partially account for the reduction in dislocation density in crystals grown from the melt. Deformation studies of undoped and In-doped (1- 2X 10 to the 20th atoms/cc-3 GaAs were performed in compression in the temperature range 500 - 1100 C at a strain rate of .0001/s in both multiple slip, 001, and single slip, 123, orientations. The critical resolved shear stress is nearly doubled with indium additions, but both undoped and In-doped materials show a weakly temperature independent critical resolved shear stress, expected from the solid solution strengthening model. The results also showed that the onset of dynamic recovery occurred at higher stress and strain levels for the In-doped materials, suggesting that the climb process is more difficult in these alloys.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1987
- Accession Number
- ADA188092
Entities
People
- John P. Hirth
- Katherine Faber
Organizations
- Ohio State University