Development of a High Speed InGaAs/InP Schottky Barrier Photodetector for Millimeter-Wave Fiber Optical Links.
Abstract
This report describes the development of long wavelength (1.3 to 1.65 micrometer) Schottky barrier photodetectors in InGaAs/InP. Two material overlays were investigated. These are the Au/P+-n- 0.43A/W and a quantum efficiency of 40.5% at 1.3 micron m without an antireflection coating. The impulse response gave a rise time of 85 ps and a FWHM of 490 ps. The RC time constant measured was 34.7 ps which corresponds to a cutoff frequency of 28.8 GHz. The n+-InP Schottky barrier requires more work to obtain good reproducibility of the barrier height enhancement technique employed. The work performed indicates that long wavelength, high frequency response, Schottky barrier for use as fiber optic compatible detectors are viable. Processing techniques are described along with supportive device modeling and experimental data on the initial devices. Keywords include: Detectors, Optical, Fiber optics, Long wavelength, and Schottky barrier.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1987
- Accession Number
- ADA188594
Entities
People
- Shengsan Li
Organizations
- University of Florida