Thin-Film Diffusion Barriers for Metal-Semiconductor Contacts,

Abstract

The notion of a diffusion barrier is discussed as it applies to thin films, and to metal semiconductor contacts in particular. The electrical requirements on the barrier material are easily met; those of the thermodynamic stability of the barrier and the low atomic diffusivity in the barrier are not. The critical influence of the deposition process on the latter property is pointed out. Several different ways to solve the problem are discussed by examples.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1987
Accession Number
ADA188712

Entities

People

  • M-a. Nicolet

Organizations

  • California Institute of Technology

Tags

DTIC Thesaurus Topics

  • Alloys
  • Amorphous Materials
  • Annealing
  • Base Pressure
  • Beam Lead Technology
  • Beam Leads
  • Diffusion
  • Diffusivity
  • Failure Mode And Effect Analysis
  • Films
  • Grain Boundaries
  • Low Temperature
  • Materials
  • Melting Point
  • Metals
  • Semiconductors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene